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| AP9962H/J Advanced Power Electronics Corp. Low On-resistance Single Drive Requirement Surface Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 20m 32A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9962J) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 40 20 32 20 150 34.7 0.27 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 110 Unit /W /W Data and specifications subject to change without notice 201028031 AP9962H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.1 19 13 5 8 8 38 20 5 180 115 Max. Units 20 30 3 1 25 100 21 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=16A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= 20V ID=20A VDS=32V VGS=4.5V VDS=20V ID=20A RG=3.3,VGS=10V RD=1.0 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1170 1870 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=32A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 24 14 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. AP9962H/J 140 120 120 T C =25 o C 10V 8.0V ID , Drain Current (A) T C =150 C 100 o 10V 8.0V 100 ID , Drain Current (A) 6.0V 80 80 6.0V 60 60 4.5V 40 4.5V 40 20 20 V G =3.0V 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 V G =3.0V 0 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 36 1.8 I D =20A 32 T C =25 o C Normalized RDS(ON) 1.6 I D =20A V G =10V 28 1.4 RDS(ON) (m ) 24 1.2 20 1.0 16 0.8 12 0.6 3 4 5 6 7 8 9 10 11 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.4 30 2.2 25 2 20 15 o T j =150 C 10 VGS(th) (V) 1.4 1.8 IS(A) T j =25 o C 1.6 1.4 5 1.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9962H/J f=1.0MHz 14 10000 I D =20A 12 VGS , Gate to Source Voltage (V) V DS =20V 10 V DS =25V V DS =32V C (pF) 1000 Ciss 8 6 Coss 100 Crss 4 2 0 0 5 10 15 20 25 30 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 100us 1ms ID (A) 10 0.2 0.1 0.1 0.05 10ms 100ms 1s DC PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 1 T C =25 C Single Pulse o 0.01 Single Pulse 0.1 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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